HEMTs

基本解释

Basing on HEMT FET, a mono-stage LNA was designed.
利用HEMT场效应管设计的单级低噪声放大器的噪声系数小于1.;5dB;增益大于11dB。
The HEMT fabricated using this structure demon-strates a noise figure of 0. 76 dB and a gain of 6.5dB at 1? GHz.
用该结构材料制作的HEMT器件在12GHz下;噪声系数0.;76dB;相关增益6
This experiment lays a foundation for the optimization of RTT and RTD HEMT monolithic integration circuit development.
实验为RTD/HEMT串联型RTT性能的优化和RTD/HEMT单片集成电路的研制奠定了基础。
The cold-mode models for HBT and HEMT devices are developed in this dissertation for the circuit design and simulation.
在本论文中，我们对于异质介面双载子电晶体和高电子移动率电晶体研究发展出非线性模型，此模型可使用于电路设计与模拟。
To predict the circuit performance, HEMT and CMOS device models used in the designs are described.
为了准确预测电路的效能，首先描述了HEMT及CMOS的元件模型。